Thinned Wafer

• ASSID Test Wafer
• Cu RDL metallization
• Wafer diameter: 300 mm
• Wafer thickness: 50 µm

 

Enhanced dicing technologies using low-k materials, small dicing strets (<40 µm) and reduced mechanical edge and corner damage to wafer frontside and backside

 

• Wafer Singulation - Mechanical Blade Dicing: Mechanical blade dicing of 300 (200) mm single  wafer ·(50 – 775µm thickness)
• Wafer Singulation - Laser Grooving: ·Dicing technology:  Q-switch pulsed UV-Laser (50 kHz) with wave length of 355nm
• Wafer Singulation - Laser Stealth Dicing: Applicable to higher doped wafers (> 0,02 Ohm*cm)
• Wafer Edge Trimming

 

Further Services

• Back Grinding (BG) Tape Lamination of 300 (200) mm UV and Non-UV tapes
  
  

Wafer Backgrinding

• Back grinding technologies: Grinding before Dicing (GBD), Dicing before Grinding (DBG), 300 TAIKO Dicing
• Wafer Backgrinding/Polish of 300 (200) mm single wafers
• Wafer Backgrinding/Polish of 300 (200)mm temporary bonded wafer stacks

• Inline  wafer mounting and BG tape peeling of 300 (200) mm single wafers on 300 (200) mm Film Frame Carrier (Disco type, metal or plastic film frame carrier)
• Application of various UV- and Non-UV dicing tapes including DAF-tape
• Inline exposure of UV-tapes
• Packing and transportation of Film Frame Carrier in 300 (200) mm Film Frame Shipper
  

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