Staff

Born in Berlin, Prof. Ulrike Ganesh studied electrical engineering at the Technical University of Berlin from 1999 to 2005 and completed her doctorate there in collaboration with Credence Systems DCG in California (USA) on the subject of “Investigation of Laser Voltage Probing Signals in CMOS Transistors”. She was awarded her doctorate with the highest distinction (summa cum laude) in 2008.

She continued her scientific career as a postdoc at IBM in New York from 2010 to 2012. She was then responsible for research in failure analysis at Qualcomm in San Diego. From 2016, she built on her extensive management experience in the field of chip development for the automotive industry at Robert Bosch GmbH, from where she moved to the Federal Institute for Materials Research and Testing in 2020, where she most recently headed the “Non-destructive Testing” department.

Since August 2024, Prof. Ganesh, a renowned expert in the field of characterization and failure analysis of advanced semiconductor technologies with extensive experience from her many years of work in research and industry, is co-chairing the Fraunhofer IZM with Prof. Martin Schneider-Ramelow.

Her personal strength lies in her ability to initiate complex research projects and to profitably combine the various interests and competencies of the partners involved. Her expertise is particularly valuable in view of the increasing demands on the reliability and performance of microelectronic systems, e.g. for chiplets or applications such as quantum computing, 6G, bioelectronics or hardware security.