![](/de/abteilungen/wafer-level-system-integration/exhibits_posters/3D_chip_stack/jcr:content/contentPar/sectioncomponent/sectionParsys/textblockwithpics_64/imageComponent1/image.img.jpg/1477324010745/3D-stack.jpg)
![](/de/abteilungen/wafer-level-system-integration/exhibits_posters/3D_chip_stack/jcr:content/contentPar/sectioncomponent/sectionParsys/textblockwithpics_64/imageComponent2/image.img.jpg/1477324010745/Stack-2.jpg)
![](/de/abteilungen/wafer-level-system-integration/exhibits_posters/3D_chip_stack/jcr:content/contentPar/sectioncomponent/sectionParsys/textblockwithpics_64/imageComponent3/image.img.png/1477324010745/Xray-CT.png)
Sub-Micron X-ray Tomography for 3D TSV Stacking (in cooperations with members and partners of "Dresden Fraunhofer Cluster Nanoanalysis")
3D Flip Chip stack of 1+9 TSV test devices (thickness: 100 µm)
SnAg interconnect structures
Minimum interconnect pitch spacing: 55 µm
Minimum distance between two stacked chips: 30 µm
placement accuracy: 3µm@3Sigma for a maximum chip size of 20 x 20 mm²
Used underfill technologies: capillary- as well as pre-applied-underfill